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| Infrared Emitting Diodes(GaAs) K DNH OESI KEL55L DIMENSIONS The KEL55L is a high-power GaAs IRED mounted in a clear plastic package. This LED emits infrared light through two plastic lenses on both sides of the package is ideally suited for use with VTR tape-end sensors. (Unit : mm) FEATURES U ompact C ULow profile package U ow-cost L USidelooking plastic package ULong-lead type APPLICATIONS UVTR type-end sensor MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I F IP PD Topr. Tstg. Tsol. Rating 5 50 1 75 -25~+85 -30~+85 260 Unit V mA A mW ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=2...) 5 Symbol VF R I Ct PO *Ip **I *E Conditions F= I 50mA VR=5V f=1MHz F I= 2 0 m A F I =20mA F= I 20mA Min. Typ. 1.3 25 2.0 940 50 - Max. 1.5 10 Unit. V *I A pF mW/sr nm nm deg. 0.7 - - - 1- Infrared Emitting Diodes(GaAs) KEL55L Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern - 2- |
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